We probe the volume collapse transition (ΔV/Vo ∼ 15%) between the isostructural γ and α phases (T ∼ 100 K) of Ce0.9Th0.1 using the Hall effect, three-terminal capacitive dilatometry, and electrical resistivity measurements. Hall effect measurements confirm the itinerant ground state as the carrier concentration increases by a factor of 7 in the α phase, γ phase (nH = 5.28 × 10(26) m(-3)), and the α phase (nH = 3.76 × 10(27) m(-3)). We were able to detect a noise spectrum consisting of avalanches while slowly varying the temperature through the hysteretic region. We surmise that the avalanches originate from intergranular stresses at the interfaces between partially transformed high-volume and low-volume phases. The statistical distribution of avalanches obey power laws with energy exponent ϵ ≃ 1.5. Hall effect measurements, combined with universal critical exponents, point to short electron mean-free percolation pathways and carrier localization at phase interfaces. Carrier localization was predicted many years ago for elemental cerium by Johansson (1974 Phil. Mag. 30 469).