The paper deals with the fabrication of a p-CuS-n-Si nanocone heterojunction based highly sensitive broad band photodetector. Cone-like one dimensional Si nanostructures formed by metal assisted chemical etching, with superior antireflection characteristics have been used as templates for fabrication of the heterojunction. Covellite CuS material was synthesized by a simple chemical reaction for used as target material for the fabrication of p-CuS-n-Si nanocone heterojunctions via pulsed laser ablation. The effect of surface texturing of Si (cone like nanostructure vs. planar) on spectral photoresponse and detection is reported.