Interface-induced modulation of charge and polarization in thin film Fe(3)O(4)

He Tian; Jo Verbeeck; Sebastian Brück; Markus Paul; Dominik Kufer; Michael Sing; Ralph Claessen; Gustaaf Van Tendeloo

doi:10.1002/adma.201303329

Interface-induced modulation of charge and polarization in thin film Fe(3)O(4)

Adv Mater. 2014 Jan 22;26(3):461-5. doi: 10.1002/adma.201303329. Epub 2013 Oct 25.

Authors

He Tian¹, Jo Verbeeck, Sebastian Brück, Markus Paul, Dominik Kufer, Michael Sing, Ralph Claessen, Gustaaf Van Tendeloo

Affiliation

¹ EMAT, Electron Microscopy for Materials Science, University of Antwerp, Belgium.

PMID: 24167041
DOI: 10.1002/adma.201303329

Abstract

Charge and polarization modulations in Fe3 O4 are controlled by taking advantage of interfacial strain effects. The feasibility of oxidation state control by strain modification is demonstrated and it is shown that this approach offers a stable configuration at room temperature. Direct evidence of how a local strain field changes the atomic coordination and introduces atomic displacements leading to polarization of Fe ions is presented.

Keywords: ABF STEM; charge modulation; monochromated EELS; oxide interface; polarization modulation.

Publication types

Research Support, Non-U.S. Gov't