A ripple-structured ZnO film as the electron-collecting layer (ECL) of an inverted organic photovoltaic (OPV) was modified by atomic layer deposition (ALD) to add a ZnO thin layer. Depositing a thin ZnO layer by ALD on wet-chemically prepared ZnO significantly increased the short-circuit current (Jsc) of the OPV. The highest power conversion efficiency (PCE) of 7.96% with Jsc of 17.9 mA/cm2 was observed in the inverted OPV with a 2-nm-thick ALD-ZnO layer, which quenched electron-hole recombination at surface defects of ZnO ripples. Moreover, an ALD-ZnO layer thinner than 2 nm made the distribution of electrical conductivity on the ZnO surface more uniform, enhancing OPV performance. In contrast, a thicker ALD-ZnO layer (5 nm) made the two-dimensional distribution of electrical conductivity on the ZnO surface more heterogeneous, reducing the PCE. In addition, depositing an ALD-ZnO thin layer enhanced OPV stability and initial performance. We suggest that the ALD-ZnO layer thickness should be precisely controlled to fabricate high-performing OPVs.