Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces

M Hjort; S Lehmann; J Knutsson; R Timm; D Jacobsson; E Lundgren; K A Dick; A Mikkelsen

doi:10.1021/nl402424x

Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces

Nano Lett. 2013 Sep 11;13(9):4492-8. doi: 10.1021/nl402424x. Epub 2013 Aug 15.

Authors

M Hjort¹, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, K A Dick, A Mikkelsen

Affiliation

¹ Department of Physics, Lund University , P.O. Box 118, 22 100 Lund, Sweden.

PMID: 23941328
DOI: 10.1021/nl402424x

Abstract

Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101[overline]0}, and {112[overline]0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.

Publication types

Research Support, Non-U.S. Gov't