Kinase detection with gallium nitride based high electron mobility transistors

Appl Phys Lett. 2013 Jul 1;103(1):13701. doi: 10.1063/1.4812987.

Abstract

A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.