Photorefractive damage resistance threshold in stoichiometric LiNbO₃:Zr crystals

Opt Lett. 2013 Aug 1;38(15):2861-4. doi: 10.1364/OL.38.002861.

Abstract

Several optical methods including ultraviolet absorption, infrared absorption of the hydroxyl ions, Raman spectroscopy, and the Z-scan method have been used to determine the damage resistance threshold in 0-0.72 mol. % Zr-containing, flux-grown, nearly stoichiometric LiNbO₃ single crystals. All spectroscopical methods used indicate that samples containing at least ≈0.085 mol. % Zr in the crystal are above the threshold while Z-scan data locate the photorefractive damage threshold between 0.085 and 0.314 mol. % Zr.