Additive effect of poly(4-vinylphenol) gate dielectric in organic thin film transistor at low temperature process

J Nanosci Nanotechnol. 2013 May;13(5):3313-6. doi: 10.1166/jnn.2013.7272.

Abstract

We fabricated pentacene-based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The solution of gate dielectrics is prepared by adding methylated poly[melamine-co-formaldehyde] (MMF) and photo-initiator (PI) [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173@Ciba] to PVP By using a small amount (2.4 wt%) of PI, the cross-linking temperature is lowered to 90 degrees C, which is lower than general thermal curing reaction temperature for the cross-linked PVP (> 180 degrees C). The hysteresis and the leakage current of the OTFTs are also decreased by adding the MMF and PI in the PVP gate dielectric.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Equipment Design
  • Equipment Failure Analysis
  • Materials Testing
  • Membranes, Artificial*
  • Nanoparticles / chemistry*
  • Organic Chemicals / chemistry*
  • Polyvinyls / chemistry*
  • Transistors, Electronic*

Substances

  • Membranes, Artificial
  • Organic Chemicals
  • Polyvinyls
  • poly(4-vinylphenol)