A high performance, stretchable UV sensor array was fabricated based on an active matrix (AM) device that combined field effect transistors of SWCNTs and SnO2 nanowires. The AM devices provided spatial UV sensing via the individual sensors in the array. SnO2 NW UV sensors showed an average photosensitivity of ∼10(5) and a photoconductive gain of ∼10(6) under very low UV (λ = 254 nm) power intensities of 0.02-0.04 mW cm(-2). The UV sensing performance was not deteriorated by a prestrain of up to 23% induced by radial deformation, consistent with the mechanical analysis.