Impact of parameter variation in fabrication of nanostructure by atomic force microscopy nanolithography

PLoS One. 2013 Jun 11;8(6):e65409. doi: 10.1371/journal.pone.0065409. Print 2013.

Abstract

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (10(15) cm(-3)) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The impact of contributing parameters in oxidation such as tip materials, applying voltage on the tip, relative humidity and exposure time are studied. The effect of the etchant concentration (10% to 30% wt) of potassium hydroxide and its mixture with isopropyl alcohol (10%vol. IPA ) at different temperatures on silicon surface are expressed. For different KOH concentrations, the effect of etching with the IPA admixture and the effect of the immersing time in the etching process on the structure are investigated. The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • 2-Propanol / chemistry
  • Hydroxides / chemistry
  • Microscopy, Atomic Force / methods*
  • Nanostructures / chemistry
  • Nanotechnology*
  • Potassium Compounds / chemistry

Substances

  • Hydroxides
  • Potassium Compounds
  • 2-Propanol
  • potassium hydroxide

Grants and funding

The authors gratefully acknowledge that this work was financially supported by Universiti Kebangsaan Malaysia through the grant funded under “DANA IMPAC PERDANA, DIP-2012-16” and Universiti Sains Malaysia, USM RU Grant no.1001/PBAHAN/814167. The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.