Mg composition dependent band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions

H H Zhang; X H Pan; B Lu; J Y Huang; P Ding; W Chen; H P He; J G Lu; S S Chen; Z Z Ye

doi:10.1039/c3cp51156a

Mg composition dependent band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions

Phys Chem Chem Phys. 2013 Jul 21;15(27):11231-5. doi: 10.1039/c3cp51156a. Epub 2013 Jun 7.

Authors

H H Zhang¹, X H Pan, B Lu, J Y Huang, P Ding, W Chen, H P He, J G Lu, S S Chen, Z Z Ye

Affiliation

¹ State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.

PMID: 23744185
DOI: 10.1039/c3cp51156a

Abstract

The valence band offsets (ΔEV) of Zn(1-x)Mg(x)O/ZnO heterojunctions grown by plasma-assisted molecular beam epitaxy were measured by photoelectron spectroscopy. From the directly obtained ΔEV values, the related conduction band offsets (ΔEC) were deduced. All the Zn(1-x)Mg(x)O/ZnO heterojunctions exhibit a type-I band alignment with the ΔEC/ΔEV estimated to be 1.5, 1.8, 2.0 for x = 0.10, 0.15 and 0.20, respectively. The band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions depend on Mg composition. The accurate determination of energy band alignment of Zn(1-x)Mg(x)O/ZnO is helpful for designing ZnO based optoelectronic devices.