FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100)

Udo Christian Kaletta; Christian Wenger

doi:10.1016/j.ultras.2013.04.009

FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100)

Ultrasonics. 2014 Jan;54(1):291-5. doi: 10.1016/j.ultras.2013.04.009. Epub 2013 Apr 18.

Authors

Udo Christian Kaletta¹, Christian Wenger

Affiliation

¹ IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany. Electronic address: kaletta@ihp-microelectronics.com.

PMID: 23684473
DOI: 10.1016/j.ultras.2013.04.009

Abstract

A simulation study of Rayleigh wave devices based on a stacked AlN/SiO₂/Si(100) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses were quantified by 2D FEM COMSOL simulations. Simulated acoustic mode shapes are presented. The impact of these parameters on the observed Rayleigh wave modes was discussed. High coupling factors of 2% and high velocities up to 5000 m/s were obtained by optimizing the AlN/SiO₂ thickness ratio.

Keywords: AlN; CMOS; FEM; Rayleigh; SAW.

MeSH terms

Aluminum Compounds / chemistry*
Aluminum Compounds / radiation effects
Computer-Aided Design
Equipment Design
Equipment Failure Analysis
Finite Element Analysis
Micro-Electrical-Mechanical Systems / instrumentation*
Scattering, Radiation
Silicon Dioxide / chemistry*
Silicon Dioxide / radiation effects
Sound*
Transducers*
Transistors, Electronic*

Substances

Aluminum Compounds
Silicon Dioxide
aluminum nitride