A new method for the formation of three-dimensional (3D) strained islands in lattice-mismatched (B on A) heteroepitaxy is proposed. Once B forms a wetting layer of a subcritical thickness, material C is deposited, which is lattice matched to A and does not wet B. Then B and C phase separate forming local B-rich and C-rich domains on the surface. The thickness of B-rich domains thus exceeds locally that of the initial film of B, and 3D islands may form as it is demonstrated by modeled phase diagrams of the C/B/A system. We show that the growth of the subcritical InAs/GaAs(100) film followed by the deposition of AlAs results (i) in the formation of Al-rich and In-rich domains in the wetting layer, confirmed by chemically sensitive scanning transmission electron microscopy, and (ii) in the stimulated onset of 3D islands, as evidenced both by high resolution transmission electron microscopy and by a significant redshift of the photoluminescence spectrum, which is in agreement with the proposed model.