We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating a Stranski-Krastanov growth mode. As the ambient temperature is increased to 300 K, the PL spectrum of the B-type dots is annihilated quickly because the large dot size induces a defect-related nonradiative recombination process. In contrast, the PL spectrum of the A-type dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P material is appropriate for an active layer of 700 nm light emitters.