Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors

Tohru Nishinaga; Takeshi Ohmae; Kazunari Aita; Masayoshi Takase; Masahiko Iyoda; Tatsuya Arai; Yoshihito Kunugi

doi:10.1039/c3cc41764f

Antiaromatic planar cyclooctatetraene: a strategy for developing ambipolar semiconductors for field effect transistors

Chem Commun (Camb). 2013 Jun 14;49(47):5354-6. doi: 10.1039/c3cc41764f.

Authors

Tohru Nishinaga¹, Takeshi Ohmae, Kazunari Aita, Masayoshi Takase, Masahiko Iyoda, Tatsuya Arai, Yoshihito Kunugi

Affiliation

¹ Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan. nishinaga-tohru@tmu.ac.jp

PMID: 23595633
DOI: 10.1039/c3cc41764f

Abstract

Tetra[2,3-thienylene] planarised by sulphur bridges and radially π-extended with (triisopropylsilyl)ethynyl groups had a narrow HOMO-LUMO gap due to the antiaromatic cyclooctatetraene core, and its single crystal FET device exhibited ambipolar characteristics with hole and electron mobilities of up to 0.40 and 0.18 cm(2) V(-1) s(-1), respectively.