Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire

Nano Lett. 2013 Apr 10;13(4):1399-404. doi: 10.1021/nl304157d. Epub 2013 Mar 8.

Abstract

We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 μeV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals / chemistry
  • Equipment Design
  • Gallium / chemistry
  • Indium / chemistry
  • Nanostructures / chemistry*
  • Nanotechnology*
  • Nanowires / chemistry*
  • Quantum Dots*
  • Silicon

Substances

  • Arsenicals
  • Indium
  • gallium arsenide
  • Gallium
  • indium arsenide
  • Silicon