Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp

Kieun Seong; Kyongjun Kim; Si Yun Park; Youn Sang Kim

doi:10.1039/c3cc38021a

Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp

Chem Commun (Camb). 2013 Apr 7;49(27):2783-5. doi: 10.1039/c3cc38021a.

Authors

Kieun Seong¹, Kyongjun Kim, Si Yun Park, Youn Sang Kim

Affiliation

¹ Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea.

PMID: 23439918
DOI: 10.1039/c3cc38021a

Abstract

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.