This research is to investigate the effects of bonding technology and thinning process on the electrical properties of 0.35 microm technology node n-MOSFET devices. After the bonding process, by changing the bonding temperature up to 400 degrees C and bonding force up to 2.5 x 10(5) Pa, these devices still have the same electrical performances. In addition, thinning process was applied to investigate the stress which would affect the electrical properties of n-MOSFETs. The electrical performances of devices do not change for substrate thickness larger than 466 microm.