Structural and optoelectronic characterization of RF sputtered ZnSnN(2)

Lise Lahourcade; Naomi C Coronel; Kris T Delaney; Sujeet K Shukla; Nicola A Spaldin; Harry A Atwater

doi:10.1002/adma.201204718

Structural and optoelectronic characterization of RF sputtered ZnSnN(2)

Adv Mater. 2013 May 14;25(18):2562-6. doi: 10.1002/adma.201204718. Epub 2013 Feb 6.

Authors

Lise Lahourcade¹, Naomi C Coronel, Kris T Delaney, Sujeet K Shukla, Nicola A Spaldin, Harry A Atwater

Affiliation

¹ Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA.

PMID: 23386387
DOI: 10.1002/adma.201204718

Abstract

ZnSnN(2), a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2(1) crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.