The implementation of the van der Pauw (VDP) technique for combined high temperature measurement of the electrical resistivity and Hall coefficient is described. The VDP method is convenient for use since it accepts sample geometries compatible with other measurements. The technique is simple to use and can be used with samples showing a broad range of shapes and physical properties, from near insulators to metals. Three instruments utilizing the VDP method for measurement of heavily doped semiconductors, such as thermoelectrics, are discussed.