Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition

Opt Express. 2012 Dec 3;20(25):27661-9. doi: 10.1364/OE.20.027661.

Abstract

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Equipment Design
  • Finite Element Analysis
  • Hafnium / chemistry
  • Lasers, Semiconductor
  • Microscopy, Electron, Scanning
  • Microtechnology / instrumentation
  • Microtechnology / methods
  • Models, Theoretical*
  • Nonlinear Dynamics
  • Optics and Photonics / instrumentation*
  • Optics and Photonics / methods*
  • Oxides / chemistry
  • Silicon Compounds / chemistry*
  • Silicon Dioxide / chemistry
  • Spectrum Analysis / instrumentation*
  • Spectrum Analysis / methods*

Substances

  • Oxides
  • Silicon Compounds
  • Silicon Dioxide
  • silicon nitride
  • Hafnium