Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode

PLoS One. 2012;7(11):e50681. doi: 10.1371/journal.pone.0050681. Epub 2012 Nov 30.

Abstract

Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals / chemistry*
  • Electric Conductivity
  • Electrodes
  • Gallium / chemistry*
  • Models, Theoretical*
  • Palladium / chemistry*
  • Semiconductors / instrumentation*
  • Silicon Dioxide / chemistry*

Substances

  • Arsenicals
  • gallium arsenide
  • Palladium
  • Silicon Dioxide
  • Gallium

Grants and funding

This work is financially supported by the National Taiwan Ocean University of the Republic of China under the contract No. NTOU-100-014 and 101B290031. The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.