CsCu(3)DyTe(4) was prepared by reacting copper, dysprosium, and tellurium with cesium azide at 850 °C in a fused silica ampule. This new telluride crystallizes in the monoclinic space group C2/m with lattice dimensions of a = 16.462(4) Å, b = 4.434(1) Å, c = 8. 881(2) Å, β = 108.609(12)° with Z = 2. Its crystal structure is dominated by (∞)(2){[Cu(3)DyTe(4)]}(1-) anionic layers separated by Cs(+) cations. The copper cations are disordered over three different tetrahedral sites. The [DyTe(6)](9-) polyhedra form infinite (∞)(1){[DyTe(4)](5-)} chains. Magnetism studies conducted on this semiconductor suggest complex magnetic interactions between the Dy(3+) cations with a strong deviation from Curie-type behavior at low temperatures below 40 K.