High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide

Opt Express. 2012 Sep 24;20(20):22224-32. doi: 10.1364/OE.20.022224.

Abstract

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Absorption
  • Computer-Aided Design
  • Equipment Design
  • Equipment Failure Analysis
  • Germanium / chemistry*
  • Light
  • Optical Devices*
  • Scattering, Radiation
  • Silicon / chemistry*
  • Telecommunications / instrumentation*

Substances

  • Germanium
  • Silicon