Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

Opt Express. 2012 Sep 24;20(20):22181-7. doi: 10.1364/OE.20.022181.

Abstract

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals / chemistry*
  • Crystallization / methods
  • Electric Conductivity
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Lasers, Semiconductor*
  • Materials Testing
  • Quantum Dots*
  • Silicon / chemistry*

Substances

  • Arsenicals
  • Indium
  • gallium arsenide
  • Gallium
  • indium arsenide
  • Silicon