Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

Opt Express. 2012 Aug 27;20(18):20647-58. doi: 10.1364/OE.20.020647.

Abstract

Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum operating temperature of Tmax ~100 K. The observed roll-over of output intensities in current ranges below maximum currents and limitation of Tmax are discussed with a model for electron-gas heating in injectors. Possible ways toward elevation of Tmax are suggested.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Aluminum / chemistry
  • Arsenicals / chemistry*
  • Crystallization / methods*
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Lasers, Solid-State*
  • Phase Transition
  • Plasma Gases / chemistry

Substances

  • Arsenicals
  • Plasma Gases
  • Indium
  • gallium arsenide
  • Gallium
  • Aluminum
  • indium arsenide