Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer

Atefeh Y Amin; Artoem Khassanov; Knud Reuter; Timo Meyer-Friedrichsen; Marcus Halik

doi:10.1021/ja307802q

Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer

J Am Chem Soc. 2012 Oct 10;134(40):16548-50. doi: 10.1021/ja307802q. Epub 2012 Sep 28.

Authors

Atefeh Y Amin¹, Artoem Khassanov, Knud Reuter, Timo Meyer-Friedrichsen, Marcus Halik

Affiliation

¹ Organic Materials & Devices, Institute of Polymer Materials, Department of Materials Science, University of Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany.

PMID: 23006044
DOI: 10.1021/ja307802q

Abstract

An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C(13)-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.