Few-layer graphene direct deposition on Ni and Cu foil by cold-wall chemical vapor deposition

Q H Chang; G L Guo; T Wang; L C Ji; L Huang; B Ling; H F Yang

doi:10.1166/jnn.2012.5432

Few-layer graphene direct deposition on Ni and Cu foil by cold-wall chemical vapor deposition

J Nanosci Nanotechnol. 2012 Aug;12(8):6516-20. doi: 10.1166/jnn.2012.5432.

Authors

Q H Chang¹, G L Guo, T Wang, L C Ji, L Huang, B Ling, H F Yang

Affiliation

¹ Key Laboratory of Optoelectronic Materials and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.

PMID: 22962776
DOI: 10.1166/jnn.2012.5432

Abstract

We report an alternative synthesis process, cold-wall thermal chemical vapor deposition (CVD), is replied to directly deposit single-layer and few-layer graphene films on Ar plasma treated Ni and Cu foils using CH4 as carbon source. Through optimizing the process parameters, large scale single-layer graphene grown on Ni foil is comparable to that grown on Cu foil. The graphene films were able to be transferred to other substrates such as SiO2/Si, flexible transparent PET and verified by optical microscopy, Raman microscopy and scanning electron microscopy. The sheet resistance and transmission of the transferred graphene films on PET substrate were also discussed.