A novel technique for the terahertz (THz) tomography of a photo-induced carrier that is based on optical-pump THz-probe time-resolved reflection spectroscopy using counterpropagation geometry of the pump and probe pulses has been proposed. Transient reflection due to the photo-induced carrier provides information about the physical properties and spatial distribution separately. We have experimentally demonstrated this method using a silicon wafer. The obtained complex reflection can be reproduced by the exact solution of Maxwell's equations, assuming an exponential distribution of the photo-induced carrier density.