Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity

Zhenhua Sun; Zhike Liu; Jinhua Li; Guo-An Tai; Shu-Ping Lau; Feng Yan

doi:10.1002/adma.201202220

Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity

Adv Mater. 2012 Nov 14;24(43):5878-83. doi: 10.1002/adma.201202220. Epub 2012 Aug 31.

Authors

Zhenhua Sun¹, Zhike Liu, Jinhua Li, Guo-An Tai, Shu-Ping Lau, Feng Yan

Affiliation

¹ Department of Applied Physics and Materials, Research Centre, The Hong Kong Polytechnic University, Hong Kong, China.

PMID: 22936561
DOI: 10.1002/adma.201202220

Abstract

Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Graphite / chemistry*
Infrared Rays*
Lead / chemistry*
Quantum Dots*
Sulfides / chemistry*
Transistors, Electronic

Substances

Sulfides
lead sulfide
Lead
Graphite