Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier

Shuji Tanaka; KyeongDong Park; Masayoshi Esashi

doi:10.1109/TUFFC.2012.2384

Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier

IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Aug;59(8):1800-5. doi: 10.1109/TUFFC.2012.2384.

Authors

Shuji Tanaka¹, KyeongDong Park, Masayoshi Esashi

Affiliation

¹ Department of Nanomechanics, Tohoku University, Sendai, Japan. tanaka@mems.mech.tohoku.ac.jp

PMID: 22899126
DOI: 10.1109/TUFFC.2012.2384

Abstract

In this study, a LiNbO(3)-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO(3) (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.

Publication types

Research Support, Non-U.S. Gov't