Synthesis and characterization of novel p-type alkyl bithiophene end-capped anthracene and naphthalene derivatives for organic thin-film transistors

Hye Jin Koh; Sang Hun Jang; Chul Young Kim; Sung Chul Shin; Yun-Hi Kim; Soon-Ki Kwon

doi:10.1166/jnn.2012.5912

Synthesis and characterization of novel p-type alkyl bithiophene end-capped anthracene and naphthalene derivatives for organic thin-film transistors

J Nanosci Nanotechnol. 2012 May;12(5):4299-304. doi: 10.1166/jnn.2012.5912.

Authors

Hye Jin Koh¹, Sang Hun Jang, Chul Young Kim, Sung Chul Shin, Yun-Hi Kim, Soon-Ki Kwon

Affiliation

¹ School of Materials Science and Engineering and Engineering Research Institute (ERI), Gyeongsang National University, Jinju, 660-701, Republic of Korea.

PMID: 22852394
DOI: 10.1166/jnn.2012.5912

Abstract

New semiconductors having naphthalene and anthracene cores with hexylated bithiophene side units, 2,6-bis(5'-hexylbithiophen-2'-yl)naphthalene (HBT-NA) and 2,6-bis(5'-hexylbithiophen-2'-yl)anthracene (HBT-AN), were synthesized. HBT-AN and HBT-NA were characterized using FT-IR, 1H-NMR, Mass spectrum and elemental analysis. HBT-AN and HBT-NA showed well ordered crystalline with high thermal stabilities as evidenced by 5% weight loss at 447 degrees C for HBT-AN and 434 degrees C for HBT-NA. The closed packed structures between adjacent molecules were observed by studying UV-visible and photoluminescence (PL) in solution and film. The HOMO energy levels of HBT-NA and HBT-AN were found to be 5.47 eV and 5.42 eV, respectively. HBT-NA exhibits hole mobility of 8.4 x 10(-2) cm2Ns and on/off ratio of 5.6 x 10(5). HBT-AN shows 5.2 x 10(-2) cm2Ns and on/off ratio of 1.0 x 10(5).

Publication types

Research Support, Non-U.S. Gov't