Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

Li-Chia Chen; Ching-Chou Wu; Ren-Guei Wu; Hsien-Chang Chang

doi:10.1021/la302186d

Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

Langmuir. 2012 Aug 7;28(31):11281-5. doi: 10.1021/la302186d. Epub 2012 Jul 23.

Authors

Li-Chia Chen¹, Ching-Chou Wu, Ren-Guei Wu, Hsien-Chang Chang

Affiliation

¹ Department of Biomedical Engineering, National Cheng Kung University, Tainan, Taiwan.

PMID: 22799621
DOI: 10.1021/la302186d

Abstract

A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 × 10(-4) and -3.1 × 10(-4) cm(2)/V s can be attained, corresponding to the applied gate voltage at -0.8 and 0.8 V, respectively, without the addition of buffer additives. A relatively high control factor (approximately 400 × 10(-6) cm(2)/V(2) s) can be obtained. The method presented in this study offers a simple strategy to control the EOF.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Buffers
Dimethylpolysiloxanes / chemistry*
Electroosmosis / standards*
Hydrogen-Ion Concentration
Microfluidic Analytical Techniques / standards*
Microfluidics / methods*
Transistors, Electronic

Substances

Buffers
Dimethylpolysiloxanes
baysilon