Stable solution-processed molecular n-channel organic field-effect transistors

Do Kyung Hwang; Raghunath R Dasari; Mathieu Fenoll; Valérie Alain-Rizzo; Amir Dindar; Jae Won Shim; Nabankur Deb; Canek Fuentes-Hernandez; Stephen Barlow; David G Bucknall; Pierre Audebert; Seth R Marder; Bernard Kippelen

doi:10.1002/adma.201201689

Stable solution-processed molecular n-channel organic field-effect transistors

Adv Mater. 2012 Aug 22;24(32):4445-50. doi: 10.1002/adma.201201689. Epub 2012 Jul 12.

Authors

Do Kyung Hwang¹, Raghunath R Dasari, Mathieu Fenoll, Valérie Alain-Rizzo, Amir Dindar, Jae Won Shim, Nabankur Deb, Canek Fuentes-Hernandez, Stephen Barlow, David G Bucknall, Pierre Audebert, Seth R Marder, Bernard Kippelen

Affiliation

¹ School of Electrical and Computer Engineering, Center for Organic Photonics and Electronics (COPE), Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA.

PMID: 22786719
DOI: 10.1002/adma.201201689

Abstract

A new solution-processable small-molecule containing electron-poor naphthalene diimide and tetrazine moieties has been synthesized. The optimized spin-coated n-channel OFETs on glass substrate shows electron mobility value up to 0.15 cm(2) V(-1) s(-1) . Inkjet-printed OFETs are fabricated in ambient atmosphere on flexible plastic substrates, which exhibits an electron mobility value up to 0.17 cm(2) V(-1) s(-1) and also shows excellent environmental and operational stability.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Electrodes
Electrons
Imides / chemistry*
Naphthalenes / chemistry*
Solutions / chemistry
Transistors, Electronic*

Substances

Imides
Naphthalenes
Solutions
naphthalenediimide