Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

Ruomeng Yu; Lin Dong; Caofeng Pan; Simiao Niu; Hongfei Liu; Wei Liu; Soojin Chua; Dongzhi Chi; Zhong Lin Wang

doi:10.1002/adma.201201020

Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

Adv Mater. 2012 Jul 10;24(26):3532-7. doi: 10.1002/adma.201201020. Epub 2012 Apr 30.

Authors

Ruomeng Yu¹, Lin Dong, Caofeng Pan, Simiao Niu, Hongfei Liu, Wei Liu, Soojin Chua, Dongzhi Chi, Zhong Lin Wang

Affiliation

¹ School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.

PMID: 22544827
DOI: 10.1002/adma.201201020

Abstract

The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Electrical Equipment and Supplies*
Gallium / chemistry*
Mechanical Phenomena*
Models, Theoretical
Nanostructures*

Substances

gallium nitride
Gallium