We estimate high optical absorption in silicon thin film photovoltaic devices using triangular corrugations on the back metallic contact. We computationally show 21.9% overall absorptivity in a 100-nm-thick silicon layer, exceeding any reported absorptivity using single layer gratings placed on the top or the bottom, considering both transverse electric and transverse magnetic polarizations and a wide spectral range (280 - 1100 nm). We also show that the overall absorptivity of the proposed scheme is relatively insensitive to light polarization and the angle of incidence. We also discuss the implications of potential fabrication process variations on such a device.
© 2012 Optical Society of America