Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

Abstract

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Energy Transfer
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Gold / chemistry*
  • Indium / chemistry*
  • Lighting / instrumentation*
  • Nanotubes / chemistry*
  • Semiconductors*

Substances

  • Indium
  • gallium nitride
  • Gold
  • Gallium
  • indium nitride