The Sr0.6Ba0.4Nb2O6 (SBN) thin films were successfully prepared on Pt/Ti/Si and SiO2/Si/Al substrates and crystallized subsequently using rapid thermal annealing (RTA) process in ambient atmosphere for 1 min. The surface morphologies and thicknesses of as-deposited and annealed SBN thin films were characterized by field emission scanning electron microscopy, and the thickness was about 246 nm. As compared with the as-deposited SBN thin films, the RTA-treated process had improved the crystalline structures and also had large influence on the crystalline orientation. When the annealing temperatures increased from 700 degrees C to 900 degrees C, the diffraction intensities of (410) and (001) peaks apparently increased. Annealed at 900 degrees C, the (001) peak had the maximum texture coefficient and SBN thin films showed a highly c-axis (001) orientation. The influences of different RTA-treated temperatures on the polarization-applied electric field (P-E) curves and the capacitance-voltage (C-V) curves were also investigated.