We propose that lateral heterostructures of single-atomic-layer graphene and hexagonal boron-carbon-nitrogen (hBCN) domains, can represent a powerful platform for the fabrication and the technological exploration of real two-dimensional field-effect transistors. Indeed, hBCN domains have an energy bandgap between 1 and 5 eV, and are lattice-matched with graphene; therefore they can be used in the channel of a FET to effectively inhibit charge transport when the transistor needs to be switched off. We show through ab initio and atomistic simulations that a FET with a graphene-hBCN-graphene heterostructure in the channel can exceed the requirements of the International Technology Roadmap for Semiconductors for logic transistors at the 10 and 7 nm technology nodes. Considering the main figures of merit for digital electronics, a FET with gate length of 7 nm at a supply voltage of 0.6 V exhibits I(on)/I(off) ratio larger than 10(4), intrinsic delay time of about 0.1 ps, and a power-delay-product close to 0.1 nJ/m. More complex graphene-hBCN heterostructures can allow the realization of different multifunctional devices, translating on a truly two-dimensional structure some of the device principles proposed during the first wave of nanoelectronics based on III-V heterostructures, as for example the resonant tunneling FET.
© 2012 American Chemical Society