Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

Nano Lett. 2012 Mar 14;12(3):1509-15. doi: 10.1021/nl204301h. Epub 2012 Mar 6.

Abstract

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Gases / chemistry*
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Metals / chemistry*
  • Molecular Conformation
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Organic Chemicals / chemistry*
  • Particle Size
  • Phase Transition
  • Surface Properties

Substances

  • Gases
  • Macromolecular Substances
  • Metals
  • Organic Chemicals