Photoelectron spectromicroscopy at chalcopyrite films

C Pettenkofer; A Hofmann; W Bremsteller; C Lehmann; F Kelleter

doi:10.1016/j.ultramic.2011.11.006

Photoelectron spectromicroscopy at chalcopyrite films

Ultramicroscopy. 2012 Aug:119:102-5. doi: 10.1016/j.ultramic.2011.11.006. Epub 2012 Jan 12.

Authors

C Pettenkofer¹, A Hofmann, W Bremsteller, C Lehmann, F Kelleter

Affiliation

¹ E-I1, Helmholtz Zentrum Berlin, 12897 Berlin, Albert-Einsteim Str 15, Germany. pettenkofer@helmholtz-berlin.de

PMID: 22326907
DOI: 10.1016/j.ultramic.2011.11.006

Abstract

CuInSe₂ films were prepared by MBE on GaAs (111) substrates. ZnSe and ZnO are subsequently deposited in situ by MOMBE. Interface parameters like band offsets and morphology are studied by X-ray photoelectron spectroscopy (XPS) and Low energy electron diffraction (LEED). Spectroscopic XPEEM (X-ray photoelectron emission microscopy) at the U49/2 PGM2 beamline at BESSY was used to investigate the lateral homogenity of the interface. After annealing in situ a lateral inhomogenious In diffusion is observed into the ZnSe/ZnO interface.