Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

Thomas Maassen; J Jasper van den Berg; Natasja Ijbema; Felix Fromm; Thomas Seyller; Rositza Yakimova; Bart J van Wees

doi:10.1021/nl2042497

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

Nano Lett. 2012 Mar 14;12(3):1498-502. doi: 10.1021/nl2042497. Epub 2012 Feb 17.

Authors

Thomas Maassen¹, J Jasper van den Berg, Natasja Ijbema, Felix Fromm, Thomas Seyller, Rositza Yakimova, Bart J van Wees

Affiliation

¹ Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands. t.maassen@rug.nl

PMID: 22324998
DOI: 10.1021/nl2042497

Abstract

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Carbon Compounds, Inorganic / chemistry*
Crystallization / methods*
Graphite / chemistry*
Macromolecular Substances / chemistry
Materials Testing
Molecular Conformation
Nanostructures / chemistry*
Nanostructures / ultrastructure*
Particle Size
Silicon Compounds / chemistry*
Surface Properties

Substances

Carbon Compounds, Inorganic
Macromolecular Substances
Silicon Compounds
Graphite
silicon carbide