2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide as a new air-stable n-type dopant for vacuum-processed organic semiconductor thin films

Peng Wei; Torben Menke; Benjamin D Naab; Karl Leo; Moritz Riede; Zhenan Bao

doi:10.1021/ja211382x

2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide as a new air-stable n-type dopant for vacuum-processed organic semiconductor thin films

J Am Chem Soc. 2012 Mar 7;134(9):3999-4002. doi: 10.1021/ja211382x. Epub 2012 Feb 23.

Authors

Peng Wei¹, Torben Menke, Benjamin D Naab, Karl Leo, Moritz Riede, Zhenan Bao

Affiliation

¹ Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.

PMID: 22324847
DOI: 10.1021/ja211382x

Abstract

2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide (o-MeO-DMBI-I) was synthesized and employed as a strong n-type dopant for fullerene C(60), a well-known n-channel semiconductor. The coevaporated thin films showed a maximum conductivity of 5.5 S/cm at a doping concentration of 8.0 wt% (14 mol%), which is the highest value reported to date for molecular n-type conductors. o-MeO-DMBI-I can be stored and handled in air for extended periods without degradation and is thus promising for various organic electronic devices.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Air
Benzimidazoles / chemical synthesis
Benzimidazoles / chemistry*
Membranes, Artificial*
Molecular Structure
Semiconductors
Vacuum

Substances

2-(2-methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide
Benzimidazoles
Membranes, Artificial