1,8-Naphthoylene(trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII) derivatives were synthesized. The OFET devices based on these new materials showed typical n-type OFET behavior and achieved an electron mobility as high as 0.10 cm(2) V(-1) s(-1) with good bias stress stability.
This journal is © The Royal Society of Chemistry 2012