A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

Sensors (Basel). 2009;9(11):9255-74. doi: 10.3390/s91109255. Epub 2009 Nov 18.

Abstract

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented.

Keywords: CMOS; GaN; fluorescence lifetime; micro light-emitting diodes (micro-LEDs); micro-system; single-photon avalanche diodes.