Photosensitivity and stress changes of Ge-free Bi-Al doped silica optical fibers under ArF excimer laser irradiation

Opt Express. 2011 Dec 19;19(27):26859-65. doi: 10.1364/OE.19.026859.

Abstract

The photosensitivity of germanium free Bi-Al-doped silica fibers with different bismuth concentrations was investigated using ArF excimer laser radiation at 193 nm and fiber grating formation. For the fiber with the highest bismuth concentration maximum refractive index changes of 2.2 × 10(-3) and 2.0 × 10(-4) were obtained for hydrogen loaded and unloaded fibers, respectively. Irradiation induced tensile stress changes were observed in the fiber core of H(2)-loaded and unloaded fibers. The results indicate a contribution of compaction to the total refractive index change in both cases.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Equipment Design
  • Equipment Failure Analysis
  • Lasers, Excimer*
  • Optical Fibers*
  • Photons
  • Silicon Dioxide / chemistry*
  • Silicon Dioxide / radiation effects*
  • Stress, Mechanical

Substances

  • Silicon Dioxide