Nanoscale probing of transient carrier dynamics modulated in a GaAs-PIN junction by laser-combined scanning tunneling microscopy

Shoji Yoshida; Yasuhiko Terada; Ryuji Oshima; Osamu Takeuchi; Hidemi Shigekawa

doi:10.1039/c2nr11551d

Nanoscale probing of transient carrier dynamics modulated in a GaAs-PIN junction by laser-combined scanning tunneling microscopy

Nanoscale. 2012 Feb 7;4(3):757-61. doi: 10.1039/c2nr11551d. Epub 2012 Jan 10.

Authors

Shoji Yoshida¹, Yasuhiko Terada, Ryuji Oshima, Osamu Takeuchi, Hidemi Shigekawa

Affiliation

¹ Institute of Applied Physics, University of Tsukuba, Tsukuba, 305-8573, Japan.

PMID: 22234391
DOI: 10.1039/c2nr11551d

Abstract

The modulation of carrier dynamics in a GaAs-PIN junction after photoexcitation by an ultrashort-pulse laser was probed by shaken-pulse-pair-excited scanning tunneling microscopy (SPPX-STM), which enables nanoscale mapping of time-resolved STM images. The effect of the built-in potential on the carrier dynamics, diffusion and drift, which cannot be probed by the optical pump-probe technique, was successfully visualized in real space.