Optical and electrical applications of ZnS(x)Se(1-x) nanowires-network with uniform and controllable stoichiometry

Junpeng Lu; Hongwei Liu; Cheng Sun; Minrui Zheng; Mathews Nripan; Gin Seng Chen; G Mhaisalkar Subodh; Xinhai Zhang; Chorng Haur Sow

doi:10.1039/c2nr11459c

Optical and electrical applications of ZnS(x)Se(1-x) nanowires-network with uniform and controllable stoichiometry

Nanoscale. 2012 Feb 7;4(3):976-81. doi: 10.1039/c2nr11459c. Epub 2012 Jan 11.

Authors

Junpeng Lu¹, Hongwei Liu, Cheng Sun, Minrui Zheng, Mathews Nripan, Gin Seng Chen, G Mhaisalkar Subodh, Xinhai Zhang, Chorng Haur Sow

Affiliation

¹ Department of Physics, National University of Singapore (NUS), 2 Science Drive 3, 117542, Singapore.

PMID: 22234311
DOI: 10.1039/c2nr11459c

Abstract

Single crystalline ternary ZnS(x)Se(1-x) nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤x≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.