Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

Wei Cai; Yulu Che; Jonathan P Pelz; Eric R Hemesath; Lincoln J Lauhon

doi:10.1021/nl203568c

Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

Nano Lett. 2012 Feb 8;12(2):694-8. doi: 10.1021/nl203568c. Epub 2012 Jan 11.

Authors

Wei Cai¹, Yulu Che, Jonathan P Pelz, Eric R Hemesath, Lincoln J Lauhon

Affiliation

¹ Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.

PMID: 22214531
DOI: 10.1021/nl203568c

Abstract

Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO(2) interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Gold / chemistry*
Microscopy, Electron, Scanning
Nanowires / chemistry*
Particle Size
Silicon / chemistry*
Silicon Dioxide / chemistry
Static Electricity
Surface Properties

Substances

Gold
Silicon Dioxide
Silicon