Topological insulator quantum dot with tunable barriers

Sungjae Cho; Dohun Kim; Paul Syers; Nicholas P Butch; Johnpierre Paglione; Michael S Fuhrer

doi:10.1021/nl203851g

Topological insulator quantum dot with tunable barriers

Nano Lett. 2012 Jan 11;12(1):469-72. doi: 10.1021/nl203851g. Epub 2011 Dec 22.

Authors

Sungjae Cho¹, Dohun Kim, Paul Syers, Nicholas P Butch, Johnpierre Paglione, Michael S Fuhrer

Affiliation

¹ Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA.

PMID: 22181853
DOI: 10.1021/nl203851g

Abstract

Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Electric Conductivity
Electromagnetic Fields
Materials Testing
Quantum Dots*
Semiconductors*